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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1079 2SC1080
DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL PARAMETER 2SC1079 VCBO Collector-base voltage 2SC1080 2SC1079 VCEO Collector-emitter voltage 2SC1080 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base 100 5 12 -12 100 150 -65~150 ae ae V A A W Open emitter 100 120 V CONDITIONS VALUE 120 V UNIT
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SC1079 V(BR)CEO Collector-emitter breakdown voltage 2SC1080 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IE=10mA ;IC=0 IC=10A; IB=1A IC=10A ; VCE=5V VCB=50V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=7A ; VCE=5V IC=2A ; VCE=5V IC=0.1A ;IB=0 CONDITIONS
2SC1079 2SC1080
SYMBOL
MIN 120
TYP.
MAX
UNIT
V 100 5 3.0 2.5 0.1 0.1 40 15 4 MHz 140 V V V mA mA
hFE-1 Classifications R 40-80 Y 70-140
2
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1079 2SC1080
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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